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16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Part Numbering Information
Part Numbering Information
Micron CellularRAM devices are available in several different configurations and densi-
ties (see Figure 3).
Figure 3:
Part Number Chart
M T 45
W 1 M W
16
B D GB - 70
8
WT ES
Micron Technology
Product Family
45 = PSRAM/CellularRAM Memory
Operating Core Voltage
W = 1.7–1.95V
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature
WT = –30°C to +85°C (see Note 1)
IT = –40°C to +85°C (contact factory)
Address Locations
M = Megabits
Standby Power Options
Blank = Standard
Operating Voltage
W = 1.7–3.6V (see Note 1)
Bus Configuration
Frequency
8 = 80 MHz
1 = 104 MHz
16 = x16
Access/Cycle Time
READ/WRITE Operation Mode
BD = Asynchronous/Page/Burst
Package Codes
GB = VFBGA “green” (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball
70 = 70ns
Notes:
1. 3.6V I/O and –30°C exceed the CellularRAM Workgroup 1.0 specifications.
Valid Part Number Combinations
After building the part number from the part numbering chart above, visit to the Micron
Part Marking Decoder Web site at www.micron.com/partsearch to verify that the part
number is offered and valid. If the device required is not on this list, contact the factory.
Device Marking
Due to the size of the package, the Micron standard part number is not printed on the
top of the device. Instead, an abbreviated device mark comprised of a five-digit alphanu-
meric code is used. The abbreviated device marks are cross-referenced to the Micron
part numbers at www.micron.com/partsearch . To view the location of the abbreviated
mark on the device, refer to customer service note, CSN-11, “Product Mark/Label” at
www.micron.com/csn .
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2005 Micron Technology, Inc. All rights reserved.
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